Improving electrical characteristics of W/HfO2/In 0.53Ga0.47As gate stacks by altering deposition techniques

D. Zade, K. Kakushima, T. Kanda, Y. C. Lin, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, E. Y. Chang, K. Natori, T. Hattori, H. Iwai

研究成果: Article査読

抄録

The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO 2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 °C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO2deposition at 300 °C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition.

本文言語English
ページ(範囲)1109-1112
ページ数4
ジャーナルMicroelectronic Engineering
88
7
DOI
出版ステータスPublished - 2011 7
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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