Improvements in thermal stability of cobalt-silicide films by adding nickel

Hiromi Shimazu, Tomio Iwasaki, Hiroyuki Ohta, Hideo Miura

研究成果: Article査読

抄録

We studied the diffusion of cobalt atoms into silicon substrates by using an X-ray diffraction experiment and molecular dynamics (MD) simulations to prevent open-circuit failures induced by the agglomeration of cobalt-silicide (CoSi2) film in semiconductor devices. The experimental results revealed that the agglomeration of cobalt-silicide films was caused by the diffusion of Co-atoms from CoSi2 films with a (111) texture into Si (001) substrates. The activation energy of Co-atom diffusion measured with sheet resistance (3.6eV) agreed well with that obtained from the MD simulations (3.7eV). We developed a CoSi2 film by adding nickel (Ni), because the MD simulation results indicated that the addition of Ni effectively reduced diffusion of Co-atoms. Its effectiveness was confirmed by measuring the sheet resistance. The agglomeration rate of CoSi2 film with Ni added was one digit smaller than that of CoSi2 film without it.

本文言語English
ページ(範囲)929-935
ページ数7
ジャーナルZairyo/Journal of the Society of Materials Science, Japan
57
9
DOI
出版ステータスPublished - 2008 9月

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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