Improvement of thermal stability of magnetoresistive random access memory device with SiN protective film deposited by high-density plasma chemical vapor deposition

Katsumi Suemitsu, Yuichi Kawano, Hiroaki Utsumi, Hiroaki Honjo, Ryusuke Nebashi, Shinsaku Saito, Norikazu Ohshima, Tadahiko Sugibayashi, Hiromitsu Hada, Tatsuhiko Nohisa, Tadashi Shimazu, Masahiko Inoue, Naoki Kasai

研究成果: Article査読

23 被引用数 (Scopus)

抄録

Embedded magnetoresistive random access memory (MRAM) with multi-level interconnects necessitates that magnetic tunnel junction (MTJ) devices have a thermal stability of 350 °C or higher during fabrication. We have improved thermal stability of MRAM devices using SiN protective film deposited by high-density plasma chemical vapor deposition (HDP-CVD) at 200 °C. The MTJ devices with HDP-CVD SiN protective film did not degrade after post-annealing at 350 °C, which suggests that the HDP-CVD process reduced oxide metal on the etched surface of the MTJ devices and that the SiN film blocked H2O diffusion from the interlayer dielectric film during post-annealing at 350 °C. We also fabricated a 1-kbit MRAM array and experimentally demonstrated thermal stability at 350 °C.

本文言語English
ページ(範囲)2714-2718
ページ数5
ジャーナルJapanese journal of applied physics
47
4 PART 2
DOI
出版ステータスPublished - 2008 4月 25
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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