Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

Takashi Aisaka, Tomoyuki Tanikawa, Takeshi Kimura, Kanako Shojiki, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Indium was introduced as a surfactant during metalorganic vapor phase epitaxial growth of nitrogen-polar GaN on c-plane sapphire tilted from 0.2 to 1.0° toward m-axis. For each sample with different tilted angle, the surfactant effect was confirmed from a scanning electron microscope and an atomic force microscope observations. In particular, for the tilted angle of 0.2°, all the hillocks, which usually exist on the nitrogen-polar GaN films on sapphire substrates with low tilted angles, disappeared. The microscopic terrace width was enlarged, and the surface roughness became small irrespective of the tilted angle, however, for the samples with higher tilted angles, the occurrence of the giant step bunching was rather enhanced. Therefore, it was confirmed that indium introduced during the nitrogen-polar GaN growth surely plays a role as a surfactant.

本文言語English
論文番号085501
ジャーナルJapanese journal of applied physics
53
8
DOI
出版ステータスPublished - 2014 8

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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