Improvement of subthreshold current transport by contact interface modification in p -type organic field-effect transistors

Masataka Kano, Takeo Minari, Kazuhito Tsukagoshi

研究成果: Article査読

138 被引用数 (Scopus)

抄録

The charge injection efficiency of organic field-effect transistors (OFETs) is found to be a critical factor determining the subthreshold characteristics of these devices. OFETs fabricated using a wide band gap organic semiconductor and gold source/drain contacts display large threshold voltage and poor subthreshold characteristics. Insertion of a metal-oxide charge injection layer at the contact/semiconductor interface lower the injection barrier height, resulting in marked improvements in threshold voltage and subthreshold slope and strong suppression of the short-channel effect. The improved subthreshold characteristics are attributed to enhanced charge injection and the consequent promotion of charge accumulation.

本文言語English
論文番号143304
ジャーナルApplied Physics Letters
94
14
DOI
出版ステータスPublished - 2009 4 17
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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