We have developed a double-sided silicon strip detector (DSSD) for the Belle Silicon Vertex Detector (SVD) upgrade. Since a radiation-hard front-end LSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 °C to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end LSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 MRad.
|出版ステータス||Published - 2000|
|イベント||2000 IEEE Nuclear Science Symposium Conference Record - Lyon, France|
継続期間: 2000 10 15 → 2000 10 20
|Other||2000 IEEE Nuclear Science Symposium Conference Record|
|Period||00/10/15 → 00/10/20|
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