Improvement of radiation-hardness of double-sided silicon strip detector for Belle SVD upgrade

J. Kaneko, H. Aihara, G. Alimonti, M. Hazumi, H. Ishino, Y. Li, K. Sumisawa, H. Tajima, J. Tanaka, G. Taylor, H. Yamamoto, M. Yokoyama, G. Varner

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

We have developed a double-sided silicon strip detector (DSSD) for the Belle Silicon Vertex Detector (SVD) upgrade. Since a radiation-hard front-end LSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 °C to 15 °C. A radiation test with a prototype module consisting of a prototype sensor and front-end LSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 MRad.

本文言語English
ページ3/127-3/131
出版ステータスPublished - 2000
イベント2000 IEEE Nuclear Science Symposium Conference Record - Lyon, France
継続期間: 2000 10 152000 10 20

Other

Other2000 IEEE Nuclear Science Symposium Conference Record
国/地域France
CityLyon
Period00/10/1500/10/20

ASJC Scopus subject areas

  • 放射線
  • 核物理学および高エネルギー物理学
  • 放射線学、核医学およびイメージング

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