Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

Y. Saito, H. Takahashi, K. Ohtsubo, Masaki Hirayama, S. Sugawa, H. Aharoni, T. Ohmi

研究成果: Conference article査読

抄録

MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H2 plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.

本文言語English
ページ(範囲)319-326
ページ数8
ジャーナルAnnual Proceedings - Reliability Physics (Symposium)
出版ステータスPublished - 2001
イベント39th Annual International Reliability Physics Symposium - Orlando, FL, United States
継続期間: 2001 4月 302001 5月 3

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 安全性、リスク、信頼性、品質管理

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