Improvement of interfacial properties with interfacial layer in La2O3/Ge structure

J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

研究成果: Article査読

35 被引用数 (Scopus)

抄録

The electrical characteristics and interfacial properties of La2O3/Ge structures under various post-deposition annealing (PDA) conditions are studied. We found that the interfacial Ge oxide layer reduced the Dit, while redundant growth of the oxide led to increment of CET. In order to satisfy small CET and low Dit, appropriate interfacial layer (IL) thickness is assumed to be 1.0-1.5 nm. On the other hand, Ge sub-oxide in the IL caused to increase hysteresis. Instead, by introducing the Ge chemical oxide, an interfacial La-germanate layer formed with PDA at 500 °C in N2, which could reduced both the hysteresis and Dit.

本文言語English
ページ(範囲)2336-2339
ページ数4
ジャーナルMicroelectronic Engineering
84
9-10
DOI
出版ステータスPublished - 2007 9
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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