Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1-xGex/Si(1 0 0) heterostructure

Takahiro Seo, Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Hole resonant-tunneling diodes (RTD) with Si/strained Si1-xGex heterostructures epitaxially grown on Si(1 0 0) have been fabricated and improvement in negative differential conductance (NDC) characteristics for high Ge fraction such as x = 0.5 was investigated. It is clearly shown that SiH4 exposure at low temperatures of 400-450 °C just after Si1-xGex epitaxial growth is effective to suppress surface roughness in atomic order. In the case of the RTD with x = 0.48, NDC characteristics for 1.4-nm thick Si barriers were observed at higher temperatures around 270 K than that for 2.4-nm thick Si barriers. By increasing the Ge fraction to x = 0.58, NDC characteristics were also observed at higher temperatures around 290 K than that with x = 0.48.

本文言語English
ページ(範囲)912-915
ページ数4
ジャーナルSolid-State Electronics
53
8
DOI
出版ステータスPublished - 2009 8 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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