Improved surface morphology in GaN homoepitaxy by NH 3-source molecular-beam epitaxy

T. Koida, Y. Uchinuma, J. Kikuchi, K. R. Wang, M. Terazaki, T. Onuma, J. F. Keading, R. Sharma, S. Nakamura, S. F. Chichibu

研究成果: Article査読

2 被引用数 (Scopus)

抄録

GaN homoepitaxial layers of improved surface morphology were studied by a NH 3-source molecular beam epitaxy method. The surface flatness was maintained by depositing the 'flux-modulated' GaN prior to the high-temperature growth. The results show that, proper feeding of reactive NH 3 and the insertion of pregrowth FM-GaN improve the surface morphology, Hall mobility, and PL qualities of GaN homoepitaxial layers grown by NH 3-MBE on the GaN/(0001) Al 2O 3. It was also found that the increased feeding of thermally activated NH 3 on the growing surface greatly reduced the surface roughness of the epilayers.

本文言語English
ページ(範囲)2158-2164
ページ数7
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
22
4
DOI
出版ステータスPublished - 2004 7
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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