Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We report two-step-recess gate InP HEMTs with a new process option suitable for producing a wide recess. In the new devices the gate recess is completely covered with a passivation film. Though the gate recess is extremely wide, a transconductance of 1 S/mm and a cutoff frequency of 208 GHz are achieved with 100-nm gate devices. Moreover, a huge improvement in the drain reliability is achieved by the wide recess which reduces hot-carrier-induced degradation, and by the full passivation which eliminates the instability related to the recess surface.

本文言語English
ページ(範囲)310-315
ページ数6
ジャーナルIEICE Electronics Express
3
13
DOI
出版ステータスPublished - 2006 7 10
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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