Improved microstructure and ohmic contact of Nb electrode on n-type 4H-SiC

研究成果: Article

10 引用 (Scopus)

抜粋

Niobium was deposited as an electrode material on an n-type SiC wafer for power device application. The reaction microstructure and electrical contact property were investigated after annealing at 700 to 1000 °C and compared with the results for an Ni electrode. Microstructure-related problems of the Ni electrode could be resolved without sacrificing ohmic contact behavior with a low contact resistivity of 1.53 × 10 - 4 Ω cm 2. Carbon precipitation was completely eliminated with Nb by the formation of carbides, leading to good adhesion upon wire bonding process. At the reaction interface, Nb 5Si 3 was formed in an epitaxial relationship with SiC, leading to a good interface contact property as well as good interface adhesion.

元の言語English
ページ(範囲)6922-6928
ページ数7
ジャーナルThin Solid Films
520
発行部数23
DOI
出版物ステータスPublished - 2012 9 30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

フィンガープリント Improved microstructure and ohmic contact of Nb electrode on n-type 4H-SiC' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用