Improved Eu luminescence properties in eu-doped gan grown on gan substrates by organometallic vapor phase epitaxy

Hitoshi Kasai, Atsushi Nishikawa, Takashi Kawasaki, Naoki Furukawa, Yoshikazu Terai, Yasufumi Fujiwara

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We have grown Eu-doped GaN on a freestanding GaN substrate by organometallic vapor phase epitaxy and investigated its red luminescence that is due to intra-4f shell transitions of EU3+ ions. The optimum growth temperature for Eu luminescence was 50 °C higher than that of Eu-doped GaN on a sapphire substrate. The highest emission intensity was more intense than that on the sapphire substrate, while the Eu luminescence lifetime was identical for both substrates. These results indicate that energy transfer from the GaN host to the EU3+ ions occurs more efficiently in Eu-doped GaN on the GaN substrate because of a low dislocation density.

本文言語English
ページ(範囲)480011-480012
ページ数2
ジャーナルJapanese journal of applied physics
49
4 PART 1
DOI
出版ステータスPublished - 2010 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Improved Eu luminescence properties in eu-doped gan grown on gan substrates by organometallic vapor phase epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル