抄録
The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1968-1970 |
| ページ数 | 3 |
| ジャーナル | IEICE Transactions on Electronics |
| 巻 | E83-C |
| 号 | 12 |
| 出版ステータス | Published - 2000 12 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学