Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure

Kenji Shiojima, Naoteru Shigekawa, Tetsuya Suemitsu

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.

本文言語English
ページ(範囲)1968-1970
ページ数3
ジャーナルIEICE Transactions on Electronics
E83-C
12
出版ステータスPublished - 2000 12 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント 「Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル