Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure

Kenji Shiojima; Naoteru Shigekawa; Tetsuya Suemitsu

Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure

Kenji Shiojima, Naoteru Shigekawa, Tetsuya Suemitsu

研究成果: Article › 査読

抄録

The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, g_m of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.

本文言語	English
ページ（範囲）	1968-1970
ページ数	3
ジャーナル	IEICE Transactions on Electronics
巻	E83-C
号	12
出版ステータス	Published - 2000 12 1
外部発表	はい

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

文献へのアクセス

フィンガープリント「Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{3200a6db386e453e8a2142d6265d903e,

title = "Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure",

abstract = "The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.",

author = "Kenji Shiojima and Naoteru Shigekawa and Tetsuya Suemitsu",

year = "2000",

month = dec,

day = "1",

language = "English",

volume = "E83-C",

pages = "1968--1970",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "12",

}

TY - JOUR

T1 - Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure

AU - Shiojima, Kenji

AU - Shigekawa, Naoteru

AU - Suemitsu, Tetsuya

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.

AB - The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.

UR - http://www.scopus.com/inward/record.url?scp=0034504217&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034504217&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0034504217

VL - E83-C

SP - 1968

EP - 1970

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 12

ER -