抄録
The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.
本文言語 | English |
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ページ(範囲) | 1968-1970 |
ページ数 | 3 |
ジャーナル | IEICE Transactions on Electronics |
巻 | E83-C |
号 | 12 |
出版ステータス | Published - 2000 12 1 |
外部発表 | はい |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering