To obtain information on the physical states of a semiconductor surface, the behavior of the carriers distributed near the surface was investigated by measuring the impedance of MOS diodes. In addition, an equivalent circuit for the semiconductor surface was constructed on the basis of the impedance and the admittance diagrams and some theories. A technique is proposed for obtaining of two metal electrodes, one set near the surface and the other on the bulk of the semiconductor.
|出版ステータス||Published - 1974 1 1|
|イベント||Int Vac Congr, 6th, Proc - Kyoto, Jpn|
継続期間: 1974 3 25 → 1974 3 29
|Other||Int Vac Congr, 6th, Proc|
|Period||74/3/25 → 74/3/29|
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