Impedance analysis of a radio-frequency single-electron transistor

H. D. Cheong, T. Fujisawa, T. Hayashi, Y. Hirayama, Y. H. Jeong

研究成果: Article査読

25 被引用数 (Scopus)

抄録

We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf-SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior.

本文言語English
ページ(範囲)3257-3259
ページ数3
ジャーナルApplied Physics Letters
81
17
DOI
出版ステータスPublished - 2002 10月 21
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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