Impact on photon-assisted charge carrier transport by engineering electrodes of GaN based UV photodetectors

Neha Aggarwal, Shibin Krishna, Shubhendra Kumar Jain, Arzoo Arora, Lalit Goswami, Alka Sharma, Sudhir Husale, Abhiram Gundimeda, Govind Gupta

研究成果: Article査読

12 被引用数 (Scopus)

抄録

A scheme illustrating electrode-engineering in metal-semiconductor-metal geometry is employed for fabricating GaN-based high-performance ultraviolet photodetectors. The effect of different metal-semiconductor (Au, Ti/Al and Al) junctions on photon-assisted charge-carrier transport and the current-conduction is explored. Depending upon work function of the metals, barrier height varies which contributed towards different characteristics of the device revealing linear and non-linear behaviour of the electrical measurements from the non-rectifying and rectifying contact at the metal-semiconductor interface respectively. A maximum photoresponsivity & efficiency of 280.4 mA/W and 107.04% respectively, under 5 V applied bias in the visible-blind region was measured from the device with rectifying Au electrodes. While, the photoresponsivity values of 219 mA/W and 200 mA/W under the same bias has been achieved from devices measured with near-Ohmic contacts using Ti/Al and Al electrodes, respectively. The enhancement in detector's performance with Au electrode has been attributed to the built-in electric field as well as the presence of internal gain which can promote efficient transport of charge carriers through the metal-semiconductor interface. Thus, an approach has been adopted to enhance the photoresponsivity of the fabricated GaN-based optoelectronic devices which could be utilized for wide range of industrial, military, environmental and biological applications.

本文言語English
ページ(範囲)883-890
ページ数8
ジャーナルJournal of Alloys and Compounds
785
DOI
出版ステータスPublished - 2019 5 15
外部発表はい

ASJC Scopus subject areas

  • 材料力学
  • 機械工学
  • 金属および合金
  • 材料化学

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