Impact of the growth polar direction on the optical properties of GaN films grown by metalorganic vapor phase epitaxy

A. Setoguchi, K. Yoshimura, M. Sumiya, A. Uedono, S. F. Chichibu

研究成果: Conference article査読

抄録

The growth polar direction during metalorganic chemical vapor phase epitaxy of wurtzite GaN films was shown to affect the optical properties an terms of impurity and vacancy-type defect incorporation during the growth. The GaN film grown towards the Gaface (0001) (+c polarity) exhibited clear excitonic features in its optical absorption and luminescence spectra up to room temperature. Conversely, the film with the N-face (000-1) (-c polarity) exhibited a broad emission band, which is located in the broadened absorption tail. The Stokes shift remained even at 300 K. The difference between the two was explained in terms of the presence of impurity-induced band tail states in -c GaN due to increased impurity density and enhanced incorporation of large volume vacancy-type defects, which were confirmed by secondary ion mass spectrometry [Sumiya et al., Appl. Phys. Lett. 76, 2098 (2000)] and monoenergetic slow positron annihilation technique.

本文言語English
ページ(範囲)G11.6.1-G11.6.6
ジャーナルMaterials Research Society Symposium - Proceedings
639
出版ステータスPublished - 2001
外部発表はい
イベントGaN and Related Alloys 2000 - Boston, MA, United States
継続期間: 2000 11 272000 12 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Impact of the growth polar direction on the optical properties of GaN films grown by metalorganic vapor phase epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル