Impact of sputtering condition for tungsten on magnetic and transport properties of magnetic tunneling junction with CoFeB/W/CoFeB free layer

H. Honjo, H. Sato, S. Ikeda, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh

研究成果: Conference contribution

抄録

Spin-transfer-torque magnetoresistive random access memories using CoFeB-MgO based magnetic tunnel junctions with perpendicular easy axis (p-MTJs) are attracting much attention owing to their high potential in offering electronics with both low-power-consumption and high-performance [1-3].

本文言語English
ホスト出版物のタイトル2017 IEEE International Magnetics Conference, INTERMAG 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781538610862
DOI
出版ステータスPublished - 2017 8 10
イベント2017 IEEE International Magnetics Conference, INTERMAG 2017 - Dublin, Ireland
継続期間: 2017 4 242017 4 28

出版物シリーズ

名前2017 IEEE International Magnetics Conference, INTERMAG 2017

Other

Other2017 IEEE International Magnetics Conference, INTERMAG 2017
国/地域Ireland
CityDublin
Period17/4/2417/4/28

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学

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