Impact of remnant stress/strain and metal contamination in 3D-LSIs with through-Si vias fabricated by wafer thinning and bonding

M. Murugesan, J. C. Bea, H. Kino, Y. Ohara, T. Kojima, A. Noriki, K. W. Lee, K. Kiyoyama, T. Fukushima, H. Nohira, Takeo Hattori, E. Ikenaga, T. Tanaka, M. Koyanag

研究成果: Conference contribution

26 被引用数 (Scopus)

抄録

Wafer thinning and formation of through-Si via (TSV) and metal microbump are key processes in 3D LSI fabrication. However, it might introduce mechanical stress and crystal defects in thinned wafers. In addition, Cu for TSV and microbump might introduce metal contamination in thinned Si substrate. Then the impact of mechanical stress and metal contamination in the thinned Si substrate has been investigated. The remnant stress left after wafer thinning was evaluated by micro-Raman spectroscopy (μRS) and XPS. It was found that the mechanical stress remained in the back surface of Si substrate after wafer thinning and a part of this mechanical stress appeared in the surface of Si substrate. The metal contamination in such thinned Si substrate has been evaluated by a C-t method. It was found that the carrier generation lifetime was degraded by Cu diffused into Si substrate at relatively low temperature of 200 °C. The mechanical stress/strain in the thinned Si substrate after wafer bonding was also evaluated to investigate the influences of metal microbumps to the thinned Si substrate. It was found that the local mechanical stress was generated in the Si substrate surface by the microbumps. This local stress caused a 3% change in the ON current of MOS transistor.

本文言語English
ホスト出版物のタイトル2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
ページ14.5.1-14.5.4
DOI
出版ステータスPublished - 2009 12 1
イベント2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
継続期間: 2009 12 72009 12 9

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
国/地域United States
CityBaltimore, MD
Period09/12/709/12/9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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