Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias

Wei Feng, Chun Meng Dou, Masaaki Niwa, Keisaku Yamada, Kenji Ohmori

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (V g) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic V g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.

本文言語English
論文番号6672013
ページ(範囲)3-5
ページ数3
ジャーナルIEEE Electron Device Letters
35
1
DOI
出版ステータスPublished - 2014 1月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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