Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias

Wei Feng; Chun Meng Dou; Masaaki Niwa; Keisaku Yamada; Kenji Ohmori

doi:10.1109/LED.2013.2288981

Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias

Wei Feng, Chun Meng Dou, Masaaki Niwa, Keisaku Yamada, Kenji Ohmori

国際集積エレクトロニクス研究開発センター

研究成果: Article › 査読

3 被引用数 (Scopus)

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The influence of random telegraph noise (RTN) in MOSFETs on drain current (I_d) during the rise/fall edges of the pulsed gate voltage (V _g) cycle was investigated. We have revealed for the first time that the existence of RTN increases I_d fluctuations under dynamic V _g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying V_g, which are governed by the RTN profiles, significantly affect the I_d values during the rise/fall edges of V_g. The revealed effects of RTN with different profiles on I_d under dynamic V_g will be useful for designing ultrahigh speed circuits.

本文言語	English
論文番号	6672013
ページ（範囲）	3-5
ページ数	3
ジャーナル	IEEE Electron Device Letters
巻	35
号	1
DOI	https://doi.org/10.1109/LED.2013.2288981
出版ステータス	Published - 2014 1月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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10.1109/LED.2013.2288981

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@article{fd30a3ecf4884a7290fab9b335403c77,

title = "Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias",

abstract = "The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (V g) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic V g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.",

keywords = "MOSFETs, Random telegraph noise, dynamic gate bias",

author = "Wei Feng and Dou, {Chun Meng} and Masaaki Niwa and Keisaku Yamada and Kenji Ohmori",

year = "2014",

month = jan,

doi = "10.1109/LED.2013.2288981",

language = "English",

volume = "35",

pages = "3--5",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias

AU - Feng, Wei

AU - Dou, Chun Meng

AU - Niwa, Masaaki

AU - Yamada, Keisaku

AU - Ohmori, Kenji

PY - 2014/1

Y1 - 2014/1

N2 - The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (V g) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic V g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.

AB - The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (V g) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic V g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.

KW - MOSFETs

KW - Random telegraph noise

KW - dynamic gate bias

UR - http://www.scopus.com/inward/record.url?scp=84891559653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891559653&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2288981

DO - 10.1109/LED.2013.2288981

M3 - Article

AN - SCOPUS:84891559653

VL - 35

SP - 3

EP - 5

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

M1 - 6672013

ER -

Impact of random telegraph noise profiles on drain-current fluctuation during dynamic gate bias

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