抄録
A study of the degradation of drain current under bias and temperature stress is presented for InP-based InAlAs/InGaAs HEMTs. Nonlinear drain resistance has been found to play an important role in the degradation. The decrease in the drain current is caused by the rapid increase in the drain resistance. The result suggests that the carrier density, which is originally sufficient to keep the resistance low and linear, decreases in the drain ohmic region.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2141-2143 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 35 |
| 号 | 24 |
| DOI | |
| 出版ステータス | Published - 1999 11月 25 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学