Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon

Yutaka Ohno, Kaihei Inoue, Kozo Fujiwara, Kentaro Kutsukake, Momoko Deura, Ichiro Yonenaga, Naoki Ebisawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, Seiji Takeda, Shingo Tanaka, Masanori Kohyama

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Using the atom probe tomography, transmission electron microscopy, and ab initio calculations, we investigate the three-dimensional distributions of oxygen atoms segregating at the typical large-angle grain boundaries (GBs) ( Σ 3 { 111 } , Σ 9 { 221 } , Σ 9 { 114 } , Σ 9 { 111 } / { 115 }, and Σ 27 { 552 }) in Czochralski-grown silicon ingots. Oxygen atoms with a covalent radius that is larger than half of the silicon's radius would segregate at bond-centered positions under tensile stresses above about 2 GPa, so as to attain a more stable bonding network by reducing the local stresses. The number of oxygen atoms segregating in a unit GB area N GB (in atoms/nm2) is hypothesized to be proportional to both the number of the tensilely-stressed positions in a unit boundary area n bc and the average concentration of oxygen atoms around the boundary [ O i] (in at. %) with N GB ∼ 50 n bc [ O i ]. This indicates that the probability of oxygen atoms at the segregation positions would be, on average, fifty times larger than in bond-centered positions in defect-free regions.

本文言語English
論文番号062105
ジャーナルApplied Physics Letters
110
6
DOI
出版ステータスPublished - 2017 2 6

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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