Impact of improved mobilities and suppressed 1/f noise in fully depleted SOI MOSFETs fabricated on Si(110) surface

W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

In this study, we reveal that Si(110) surface is flatted using HF(0.5wt%)/H2-UPW solution in N2 ambience without light illumination. We demonstrate that the electron effective mobility on Si(110) is obviously improved by introducing this new chemical surface flattening process. Especially, the improvement of electron mobility become larger while the effective field is increased. As a result, the electron mobility is improved about 1.4 times at the high effective field equals 1 MV/cm, which is mostly limited by surface roughness. We consider that the improvement of the electron mobility is originated in the good suppression of surface micro-roughness in this experiment. However, the 1/f noise level is almost the same even introducing the chemical surface flattening process. In this paper, it is observed that the 1/f noise level of MOSFETs on Si(110) is suppressed very well by introducing the novel accumulation mode device structures.

本文言語English
ホスト出版物のタイトルECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices
出版社Electrochemical Society Inc.
ページ101-106
ページ数6
4
ISBN(電子版)9781566775533
ISBN(印刷版)9781566775533
DOI
出版ステータスPublished - 2007
イベント13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting - Chicago, IL, United States
継続期間: 2007 5月 62007 5月 11

出版物シリーズ

名前ECS Transactions
番号4
6
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting
国/地域United States
CityChicago, IL
Period07/5/607/5/11

ASJC Scopus subject areas

  • 工学(全般)

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