Impact of high B concentrations and high dislocation densities on Au diffusion in Si

A. Rodriguez, H. Bracht, Ichiro Yonenaga

研究成果: Article査読

10 被引用数 (Scopus)

抄録

The diffusion of Au in highly dislocated, virtually undoped and heavily B-doped Si at temperatures between 800 and 1100°C was discussed. The neutron-activation analysis in conjunction with serial sectioning was used for the investigation purpose. It was found that by increasing B doping, the diffusivity of Au increases. The profiles yield an enhanced boundary concentration and a decreased Au diffusion coefficient below 1000°C. The results show that the doping difference of Au diffusion is due to an increased solubility CAuieq with increasing B doping.

本文言語English
ページ(範囲)7841-7849
ページ数9
ジャーナルJournal of Applied Physics
95
12
DOI
出版ステータスPublished - 2004 6 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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