Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements

Yasuo Shimizu, Hisashi Takamizawa, Koji Inoue, Fumiko Yano, Shuichi Kudo, Akio Nishida, Takeshi Toyama, Yasuyoshi Nagai

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The impact of carbon (C) co-implantation on boron (B) activation in crystalline silicon was investigated. The detailed distribution of B and C atoms and B activation ratios dependent on the C ion-implantation energies were examined based on three-dimensional spatial mappings of B and C obtained by atom probe tomography and from depth profiles of their concentrations from secondary ion mass spectrometry and depth profiles of carrier concentrations with spreading resistance measurements. At all C implantation energies (8, 15, and 30 keV), B out-diffusion during activation annealing was reduced, so that more B atoms were observed in the C co-implanted samples. The carrier concentration was decreased throughout the entire implanted region for C implantation energies of 15 and 30 keV, although it was only increased at greater depths for C co-implantation at 8 keV. Two different effects of C co-implantation, (I) reduction of B out-diffusion and (II) influence of B activation, were confirmed.

本文言語English
論文番号026501
ジャーナルJapanese journal of applied physics
55
2
DOI
出版ステータスPublished - 2016 2

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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