Impact of atomistic surface structure on macroscopic surface reaction rate in MOVPE of GaAs

Masakazu Sugiyama, Haizheng Song, Momoko Deura, Yoshiaki Nakano, Yukihiro Shimogaki

研究成果: Article査読

1 被引用数 (Scopus)

抄録

In situ reflectance anisotropy spectroscopy was employed to interpret the surface reaction rate constant (ks) of a Ga precursor on a GaAs(001) surface in metallorganic vapor-phase epitaxy (MOVPE), which was extracted by the analysis of selective-area growth. The activation energy of ks significantly decreased above 625-630°C. Correspondingly, the surface anisotropy spectrum changed around 600°C from that of surface reconstruction containing Ga dimers at lower temperatures to that of c (4×4) -like reconstruction with As dimers at higher temperatures. These observations suggest a step-flow growth mode at higher temperatures and an island growth mode at lower temperatures.

本文言語English
ジャーナルElectrochemical and Solid-State Letters
10
4
DOI
出版ステータスPublished - 2007 2月 19

ASJC Scopus subject areas

  • 化学工学(全般)
  • 材料科学(全般)
  • 物理化学および理論化学
  • 電気化学
  • 電子工学および電気工学

フィンガープリント

「Impact of atomistic surface structure on macroscopic surface reaction rate in MOVPE of GaAs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル