Impact of alkali earth elements incorporation on electrical characteristics of La2O3 gated MOS device

T. Koyanagi, K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The impacts of Mg, SrO or BaO capping, alkali earth oxides, into La 2O3 MOS devices have been examined. A roll-off characteristic in flat-band voltage (Vfb) dependence on equivalent oxide thickness (EOT) has been suppressed with Mg capping and incorporation. On the other hand, capping with SrO and BaO have showed roll-up characteristics below an EOT of 1.2 nm. The main reason can be considered as the change in the number of fixed charges. No notable change in leakage current (Jg) has been observed.

本文言語English
ホスト出版物のタイトルECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
ページ17-22
ページ数6
6
DOI
出版ステータスPublished - 2009
外部発表はい
イベント7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
継続期間: 2009 10 52009 10 7

出版物シリーズ

名前ECS Transactions
番号6
25
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
国/地域Austria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • 工学(全般)

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