The impacts of Mg, SrO or BaO capping, alkali earth oxides, into La 2O3 MOS devices have been examined. A roll-off characteristic in flat-band voltage (Vfb) dependence on equivalent oxide thickness (EOT) has been suppressed with Mg capping and incorporation. On the other hand, capping with SrO and BaO have showed roll-up characteristics below an EOT of 1.2 nm. The main reason can be considered as the change in the number of fixed charges. No notable change in leakage current (Jg) has been observed.
|ホスト出版物のタイトル||ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7|
|出版ステータス||Published - 2009|
|イベント||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria|
継続期間: 2009 10 5 → 2009 10 7
|Other||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society|
|Period||09/10/5 → 09/10/7|
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