Impact ionisation in GaAs planar-doped barrier structures grown by molecular layer epitaxy

Y. X. Liu, Y. Oyama, P. Ptotka, K. Suto, J. Nishizawa

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The I-V characteristics and substrate current of GaAs planar-doped barrier (PDB) n+-i-p+-i-n+ structures with various barrier heights (0.5-0.8V) grown by molecular layer epitaxy (MLE) have been measured at temperatures ranging from 77 to 296K. The measurement was carried out at the constant source-drain distance of 1000A. It is found that an abrupt increase in the drain current occurs, in the high barrier (>0.73V) PDB structures at a threshold bias voltage FTH. The value of FTH decreases from 3.1 to 2.7V with increasing temperature from 77 to 296K, and the coefficient is -1.8 mV/K. The ratio of KTH and GaAs bandgap Eg is obtained to be eV-4E-4 = 2. The mechanism of the abrupt increase in the drain current is attributed to the effects of ballistic electron transport and the lowering of the potential barrier by the accumulation of impact-ionisationgenerated holes at the p+ plane. Furthermore, this mechanism is confirmed by the results of photocurrent measurements, in which holes are generated by incident light. The obtained results have important implications for the design of the barrier height in PDB structures and other devices having thin potential barriers.

本文言語English
ページ(範囲)165-170
ページ数6
ジャーナルIEE Proceedings: Circuits, Devices and Systems
147
3
DOI
出版ステータスPublished - 2000
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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