A theory for scanning nonlinear dielectric microscopy (SNDM) and its application to the quantitative evaluation of the linear and nonlinear dielectric constants of dielectric materials are described. First, a general theorem for the capacitance variation under an applied electric field is derived and a capacitance variation susceptibility Snl, which is a very useful parameter for the quantitative measurement of nonlinear dielectric constants, is defined. This Snl is independent of the tip radius, and therefore the sensitivity of the SNDM probe does not change, even if a tip with a smaller radius is selected to obtain a finer resolution. Using the theoretical results and the data taken by SNDM, the quantitative linear and nonlinear dielectric properties of several dielectric materials were successfully determined. From the calculation of a one-dimensional image of a 180° c-c domain boundary, it is demonstrated that the SNDM has an atomic scale resolution.
|出版ステータス||Published - 2001|
|イベント||12th International Symposium on Integrated Ferroelectrics - Aachen, Germany|
継続期間: 2000 3 12 → 2000 3 15
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