III-V-Based Ferromagnetic Semiconductors

研究成果: Chapter

1 被引用数 (Scopus)

抄録

III-V compound semiconductors such as GaAs and InAs alloyed with Mn exhibit ferromagnetism. The magnetic, electrical, and optical properties of ferromagnetic III-V semiconductors are first compiled along with the way to prepare the epitaxial films and the effect of postgrowth annealing. Theories available to explain the magnetism in these alloys are then presented. Because the ferromagnetic semiconductors are compatible with epitaxial III-V heterostructures, a number of device structures have been examined and shown to reveal a wide variety of phenomena that either cannot be realized or are very difficult to observe in ferromagnetic metal structures. The unique properties revealed by ferromagnetic semiconductor structures, ranging from reversible electric field control of ferromagnetic phase transition to generating velocity versus current-density curves of current-induced domain wall motion, are then reviewed. The prospect of realizing high-transition temperature is discussed in the last section.

本文言語English
ホスト出版物のタイトルNanomagnetism and Spintronics
ホスト出版物のサブタイトルSecond Edition
出版社Elsevier Inc.
ページ315-358
ページ数44
ISBN(印刷版)9780444632791
DOI
出版ステータスPublished - 2013 10月

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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