Ideal static induction transistor implemented with molecular layer epitaxy

Piotr Płotka, Toru Kurabayashi, Yutaka Oyama, Jun ichi Nishizawa

研究成果: Article査読

32 被引用数 (Scopus)

抄録

Molecular layer epitaxy (MLE) was applied for fabrication of static induction transistors (SIT) with electrical source-drain distances from 170 Å (metallurgical 90 Å) to 1000 Å. Channels-gates were regrown selectively under an overchanging SiNx mask in a self-alignment way on sidewalls of ex-situ etched grooves. Characteristics of the SITs reveal dependence of properties of the crystal regrown on a sidewall on the sidewall orientation. 170 Å (90 Å) transistors with gate interfaces parallel to the 〈011̄〉 direction are normally-off while the transistors with gates parallel to 〈011〉 are normally- on.

本文言語English
ページ(範囲)91-96
ページ数6
ジャーナルApplied Surface Science
82-83
C
DOI
出版ステータスPublished - 1994 12 2
外部発表はい

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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