抄録
Molecular layer epitaxy (MLE) was applied for fabrication of static induction transistors (SIT) with electrical source-drain distances from 170 Å (metallurgical 90 Å) to 1000 Å. Channels-gates were regrown selectively under an overchanging SiNx mask in a self-alignment way on sidewalls of ex-situ etched grooves. Characteristics of the SITs reveal dependence of properties of the crystal regrown on a sidewall on the sidewall orientation. 170 Å (90 Å) transistors with gate interfaces parallel to the 〈011̄〉 direction are normally-off while the transistors with gates parallel to 〈011〉 are normally- on.
本文言語 | English |
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ページ(範囲) | 91-96 |
ページ数 | 6 |
ジャーナル | Applied Surface Science |
巻 | 82-83 |
号 | C |
DOI | |
出版ステータス | Published - 1994 12月 2 |
外部発表 | はい |
ASJC Scopus subject areas
- 表面、皮膜および薄膜