Transport properties have been studied for a perovskite heterojunction consisting of SrRu O3 (SRO) film epitaxially grown on Sr Ti0.99 Nb0.01 O3 (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage (I-V) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an n -type semiconductor (Nb:STO). A hysteresis appears in the I-V characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 μs-10 ms duration.
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