Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3

T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, Y. Tokura

研究成果: Article査読

342 被引用数 (Scopus)

抄録

Transport properties have been studied for a perovskite heterojunction consisting of SrRu O3 (SRO) film epitaxially grown on Sr Ti0.99 Nb0.01 O3 (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage (I-V) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an n -type semiconductor (Nb:STO). A hysteresis appears in the I-V characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 μs-10 ms duration.

本文言語English
論文番号012107
ページ(範囲)012107-1-012107-3
ジャーナルApplied Physics Letters
86
1
DOI
出版ステータスPublished - 2005 1月

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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