Hydrogen interaction with Pd/SiO2/Si rectifying junction

Ming Zhao, Shinji Nagata, Shunya Yamamoto, Masahito Yoshikawa, Tatsuo Shikama

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The interaction between hydrogen and Pd/SiO2/Si structures has been investigated in this research. Palladium (Pd) films <2 nm thick which are consisted of Pd nanoparticles were deposited on n-type Si and sapphire substrates by magnetron sputtering. We have observed that the surface resistance of Pd/SiO2/Si structure increased more than 20 times within 1.4 s at room temperature during the hydrogen exposure. Our comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Al 2O3 indicate that the reduction in the carrier density of the interfacial layer is the major contribution to the surface resistance change in Pd/SiO2/Si. Further comparison results between the surface I-V characteristic of Pd/SiO2/Si and Pd/Si reveal that the interfacial layer is the inversion layer (p-type) of the rectifying junction.

本文言語English
ページ(範囲)223-228
ページ数6
ジャーナルMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
175
3
DOI
出版ステータスPublished - 2010 12月 15

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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