Hydrogen desorption kinetics from the growing Si(100) surface during silane gas-source molecular beam epitaxy

K. J. Kim, M. Suemitsu, N. Miyamoto

研究成果: Article査読

16 被引用数 (Scopus)

抄録

Hydrogen desorption from Si(100) surfaces during silane gas-source molecular beam epitaxy was investigated by temperature-dependent measurements on the growth rate (GR) and the surface hydrogen coverage (θ) during growth. By use of a prediction from a balance between adsorption and desorption of surface hydrogens that GR/θn should follow the Arrhenius relation, the reaction order n and the activation energy were obtained. It is most likely that the desorption proceeds via a first order reaction with the activation energy of 2.0 eV. This energy value is a reasonable one for the hydrogen desorption process and is compared to 1.29 eV for the growth rate itself.

本文言語English
ページ(範囲)3358-3360
ページ数3
ジャーナルApplied Physics Letters
63
24
DOI
出版ステータスPublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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