Hydrogen desorption from Si(100) surfaces during silane gas-source molecular beam epitaxy was investigated by temperature-dependent measurements on the growth rate (GR) and the surface hydrogen coverage (θ) during growth. By use of a prediction from a balance between adsorption and desorption of surface hydrogens that GR/θn should follow the Arrhenius relation, the reaction order n and the activation energy were obtained. It is most likely that the desorption proceeds via a first order reaction with the activation energy of 2.0 eV. This energy value is a reasonable one for the hydrogen desorption process and is compared to 1.29 eV for the growth rate itself.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)