Hydrogen chemisorption on the 100 (2 × 1) surfaces of Si and Ge

Joel A. Appelbaum, G. A. Baraff, D. R. Hamann, H. D. Hagstrum, T. Sakurai

    研究成果: Article査読

    73 被引用数 (Scopus)

    抄録

    This paper combines a theoretical study of the Si(100) surface having a monolayer of atomic hydrogen chemisorbed to it with an experimental study of the analogous Ge(100) and Ge(110) surfaces. In the theoretical work the underlying (100) silicon surface is taken to be reconstructed according to the Schlier-Farnsworth-Levine pairing model with the hydrogen located on the unfilled tetrahedral bonds of this structure. Self-consistent calculations of the electronic potential, charge density, spectrum, and occupied surface density of states are carried out. The force on the hydrogen atoms is then calculated using the Hellman-Feynman theorem. This force is found to be close to zero, confirming that the hydrogen atoms are indeed at the equilibrium position for the chosen silicon geometry. Features in the calculated photoemission spectrum for the Si(100) 2 × 1 : H surface are discussed in terms of related features in the photoemission spectrum of Si(111) : H, but are found not to agree with the previously measured photoemission spectrum of Si(100) 2 × 1 : H. Measured photoemission and ion-neutralization spectra for Ge(100) 2 × 1 : H agree in their major features with what is calculated for Si(100) 2 × 1 : H, however, suggesting that the Ge(100) 2 × 1 : H surface is reconstricted according to the pairing model. Similarly, measured spectra for clean Ge(100) 2 × 1 agree with calculations for the row dimerized Si(100) surface.

    本文言語English
    ページ(範囲)654-673
    ページ数20
    ジャーナルSurface Science
    70
    1
    DOI
    出版ステータスPublished - 1978 1月 1

    ASJC Scopus subject areas

    • 物理化学および理論化学
    • 凝縮系物理学
    • 表面および界面

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