Hydrogen chemisorption on Si surfaces analyzed by magnetic-sector, atom-probe, field-ion microscopy

Toshio Sakurai, E. W. Müller, R. J. Culbertson, A. J. Melmed

    研究成果: Article査読

    32 被引用数 (Scopus)

    抄録

    An atom-probe field-ion microscope was successfully employed for the first time to study semiconductor Si surfaces. Using a magnetic-sector type we have observed pure silicon Si+, monohydride SiH+, and dihydride SiH2+, ions from the well-ordered H-covered (111) and (110) planes, and pure silicon Si+, monohydride SiH+, and silane SiH4+ ions from the disordered (311) areas. This observation is taken as the evidence for the formation of the silicon dihydride and trihydride surface phases suggested by recent ultraviolet photoemission studies.

    本文言語English
    ページ(範囲)578-581
    ページ数4
    ジャーナルPhysical Review Letters
    39
    9
    DOI
    出版ステータスPublished - 1977

    ASJC Scopus subject areas

    • 物理学および天文学(全般)

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