Hydrogen atom desorption induced by electron bombardment on si surface

W. Li, S. Sato, H. Akima, M. Sakuraba

研究成果: Conference contribution

抄録

In this research, we aim at developing STM lithography with atomic resolution toward its application to quantum devices. First, we have confirmed successfully an atomically flat and hydrogen-Terminated surface of Si (111) required for the lithography after unisotropic chemical etching in aqueous NH4F solution with decreased dissolved oxygen. Next, we have studied hydrogen desorption from the surface by electron bombardment from an STM tip. It has been confirmed that desorption area increases approximately in proportion to the tunneling current.

本文言語English
ホスト出版物のタイトルSemiconductors, Metal Oxides, and Composites
ホスト出版物のサブタイトルMetallization and Electrodeposition of Thin Films and Nanostructures 3
編集者P. M. Vereecken, G. Oskam, J. Fransaer
出版社Electrochemical Society Inc.
ページ35-38
ページ数4
31
ISBN(電子版)9781607685395
DOI
出版ステータスPublished - 2015
イベントSymposium on Semiconductors, Metal Oxides, and Composites: Metallization and Electrodeposition of Thin Films and Nanostructures 3 - 228th ECS Meeting - Phoenix, United States
継続期間: 2015 10 112015 10 15

出版物シリーズ

名前ECS Transactions
番号31
69
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherSymposium on Semiconductors, Metal Oxides, and Composites: Metallization and Electrodeposition of Thin Films and Nanostructures 3 - 228th ECS Meeting
国/地域United States
CityPhoenix
Period15/10/1115/10/15

ASJC Scopus subject areas

  • 工学(全般)

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