Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

H. Asahi; Y. Kawamura; Y. Noguchi; T. Matsuoka; H. Nagai

doi:10.1049/el:19830345

Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

H. Asahi, Y. Kawamura, Y. Noguchi, T. Matsuoka, H. Nagai

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

InGaAsP InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.

本文言語	English
ページ（範囲）	507-509
ページ数	3
ジャーナル	Electronics Letters
巻	19
号	14
DOI	https://doi.org/10.1049/el:19830345
出版ステータス	Published - 1983 7月 7
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19830345

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title = "Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers",

abstract = "InGaAsP InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.",

author = "H. Asahi and Y. Kawamura and Y. Noguchi and T. Matsuoka and H. Nagai",

year = "1983",

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T1 - Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

AU - Asahi, H.

AU - Kawamura, Y.

AU - Noguchi, Y.

AU - Matsuoka, T.

AU - Nagai, H.

PY - 1983/7/7

Y1 - 1983/7/7

N2 - InGaAsP InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.

AB - InGaAsP InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.

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Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

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