Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs

Haruo Nakazawa, Masaaki Ogino, Hiroki Wakimoto, Tsunehiro Nakajima, Yoshikazu Takahashi, David Hongfei Lu

研究成果: Conference contribution

16 被引用数 (Scopus)

抄録

We newly developed a 1200V Reverse Blocking (RB)-IGBT used to form bi-directional switches in advanced Neutral-Point-Clamped (A-NPC) 3-Level modules. It featured a hybrid through-silicon isolation structure combining wafer front-side boron deep diffusion with back-side V-groove etching. Collector layer was implanted into the back-side and the surface of the V-grooves, and electrically connected to the front-side boron diffusion after activation to achieve reverse-blocking capability. Thermal budget for the surface deep boron diffusion was thereby shortened more than a half of that in full diffusion case to improve both throughput and yield. Sufficient reverse blocking capability was experimentally verified.

本文言語English
ホスト出版物のタイトルISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs
ページ116-119
ページ数4
DOI
出版ステータスPublished - 2011 12 1
外部発表はい
イベント23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011 - San Diego, CA, United States
継続期間: 2011 5 232011 5 26

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(印刷版)1063-6854

Other

Other23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011
国/地域United States
CitySan Diego, CA
Period11/5/2311/5/26

ASJC Scopus subject areas

  • 工学(全般)

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