Hybrid AMR/PHR ring sensor

Sunjong Oh, P. B. Patil, Tran Quang Hung, Byunghwa Lim, Migaku Takahashi, Dong Young Kim, Cheolgi Kim

研究成果: Article査読

20 被引用数 (Scopus)

抄録

The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is 9.5mΩOe, and its value monotonously increased to 102.6mΩOe for 17 rings with an enhanced active area.

本文言語English
ページ(範囲)1248-1251
ページ数4
ジャーナルSolid State Communications
151
18
DOI
出版ステータスPublished - 2011 9
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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