HRTEM investigation of effect of various rare earth oxide dopants on epitaxial zirconia high-K gate dielectrics

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

研究成果: Conference article査読

6 被引用数 (Scopus)

抄録

The effects of several rare earth oxide on the capacitance-voltage (C-V) characteristics and the SiO2 interlayer growth of ZrO2 based gate dielectrics were examined. The width of the hysteresis window of La2O3 stabilized ZrO2 (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc2O3 stabilized ZrO2 (ScSZ) gate dielectric was 1.4V HRTEM analysis indicated that the growth of SiO2 interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO2 gate dielectric doped with rare earth oxide composed of larger ionic radius cation.

本文言語English
ページ(範囲)171-176
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
747
出版ステータスPublished - 2003 8 25
外部発表はい
イベントCrystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States
継続期間: 2002 12 22002 12 4

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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