We report on a study seeking an optimized contact configuration for organic transistors that minimizes contact effects but maintains smallest contact size. We begin with the bulk access resistance in staggered transistors which results from the charge transport through the organic semiconductor film. Bulk access resistance is an intrinsic contributor to the contact resistance which has been little understood due to lack of a reliable study tool. In this work, we utilize the inner transported power inside the semiconductor film as a medium to investigate the contact resistance and the relevant contact effects. We examine the influences of the organic film thickness (tSC), the channel length (L), the underlying charge transport and various organic semiconductor materials with variable carrier mobility. A roughly optimal contact length (LC) of LC0 ≈ 6tSC is obtained. The results reveal that besides the device architecture the underlying charge transport should be also taken into account in designing organic transistors for practical application.
ASJC Scopus subject areas
- 化学 (全般)