Hot electron injection characteristics in asymmetrically structured submicron MOSFETs

Naoko Okabe, Hiroshi Takato, Yukihito Oowaki, Takeshi Hamamoto, Akihiro Nitayama

研究成果: Article

抜粋

Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.

元の言語English
ページ(範囲)L21-L23
ジャーナルJapanese journal of applied physics
28
発行部数1 A
DOI
出版物ステータスPublished - 1989 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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