Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs

Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota

研究成果: Conference article査読

5 被引用数 (Scopus)

抄録

In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.

本文言語English
論文番号1315370
ページ(範囲)449-454
ページ数6
ジャーナルIEEE International Reliability Physics Symposium Proceedings
2004-January
January
DOI
出版ステータスPublished - 2004
イベント42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States
継続期間: 2004 4月 252004 4月 29

ASJC Scopus subject areas

  • 工学(全般)

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