Hot-carrier-immunity degradation in MOSFETs caused by ion-bombardment processes

Koji Kotani, Tadashi Shibata, Tadahiro Ohmi

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

The degradation in MOS device characteristics as well as in their hot-electron injection immunity caused by ion-bombardment processes have been investigated. It has been found that neutral electron-traps were generated due to the charging-up of the gate electrode during ion implantation. These neutral traps contribute to positive threshold shifts by hot-electron injection. It has been demonstrated that such problems are able to be removed by grounding the gate electrode during ion implantation. Similar effects were also observed for a low-energy bias sputtering deposition process.

本文言語English
ページ311-314
ページ数4
DOI
出版ステータスPublished - 1990 1 1
イベント22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
継続期間: 1990 8 221990 8 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • 工学(全般)

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