Hot carrier immunity degradation in metal oxide semiconductor field effect transistors caused by ion bombardment processes

Koji Kotani, Tadashi Shibata, Tadahiro Ohmi

研究成果: Article査読

抄録

The degradation in MOS device characteristics as well as in their hot-electron injection immunity caused by ion-bombardment processes has been investigated. It has been found that neutral electron traps were generated due to the charging-up of the gate electrode during ion implantation. These neutral traps contribute to enhanced positive threshold shifts in the following hot-electron injection experiment. It has been demonstrated that such problems can be eliminated by grounding the gate electrode during ion implantation. Similar effects were also observed for a low-energy bias sputtering deposition process.

本文言語English
ページ(範囲)2389-2391
ページ数3
ジャーナルJapanese journal of applied physics
29
12
DOI
出版ステータスPublished - 1990 12月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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