Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si0.8Ge0.2 heterostructures grown on Si(1 0 0) by low-temperature ultraclean LPCVD

Ryota Ito, Masao Sakuraba, Junichi Murota

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Hole resonant tunnelling diodes (RTDs) with Si/strained Si 1-xGex heterostructures epitaxially grown on Si(1 0 0) were fabricated, and sharp current peaks have been reproducibly observed. From the quantum well width dependence of the current-voltage characteristics, at the peak voltage, heavy holes in the accumulation region resonantly tunnel through the estimated resonant states of a light hole and a heavy hole in a Si1-xGex quantum well. The top contact and mesa area dependence of the peak current shows that the tunnel current only flows under a top contact electrode, i.e. the leakage current at the sidewall is negligibly small. The resonant tunnelling current density reaches as high as 3.6 kA cm-2 at 0.19 V with 2 nm thick barriers. Moreover, the introduction of higher Ge fraction effectively suppresses the increase of the valley current and enables negative differential conductance at higher operation temperature.

本文言語English
論文番号S09
ページ(範囲)S38-S41
ジャーナルSemiconductor Science and Technology
22
1
DOI
出版ステータスPublished - 2007 1 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

フィンガープリント 「Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si<sub>0.8</sub>Ge<sub>0.2</sub> heterostructures grown on Si(1 0 0) by low-temperature ultraclean LPCVD」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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