Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging

Jack Strand, Oliver A. Dicks, Moloud Kaviani, Alexander L. Shluger

    研究成果: Article査読

    9 被引用数 (Scopus)

    抄録

    Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states. Polarons in the crystalline phase have small trapping energies of the order of 0.2 eV. In the amorphous phase, structural precursor sites cause deep hole trapping with trapping energies exceeding 1.2 eV making these states likely candidates for positive charging in oxide films.

    本文言語English
    ページ(範囲)235-239
    ページ数5
    ジャーナルMicroelectronic Engineering
    178
    DOI
    出版ステータスPublished - 2017 6 25

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

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