Hole reduction and electron accumulation in YBa2Cu 3Oy thin films using an electrochemical technique: Evidence for an n-type metallic state

T. Nojima, H. Tada, S. Nakamura, N. Kobayashi, H. Shimotani, Y. Iwasa

研究成果: Article査読

27 被引用数 (Scopus)

抄録

We demonstrated extreme hole reduction and electron accumulation in YBa2Cu3Oy films by an electrochemical technique. Following the transition from superconductor to insulator, we succeeded in doping electrons as evidenced by the decrease in resistivity and sign change of the Hall coefficient. Further doping resulted in metallic n-type YBa2Cu3Oy with a carrier density of ∼2.5 × 1020 cm-3, but without any sign of superconductivity. The oxygen vacancies electrochemically induced in the CuO2 planes played a major role in the p-n transition.

本文言語English
論文番号020502
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
84
2
DOI
出版ステータスPublished - 2011 7 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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